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STD60N55-1 STD60N55
N-channel 55V - 8.0m - 65A - DPAK - IPAK MDmeshTM low voltage Power MOSFET
PRELIMINARY DATA
General features
Type STD60N55 STD60N55-1

VDSS 55V 55V
RDS(on) <10.5m <10.5m
ID 65A 65A
Pw 110W 110W
3 1
Standard threshold drive 100% avalanche tested
DPAK
3 2 1
IPAK
Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique "Single Feature SizeTM" strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STD60N55 STD60N55-1 Marking D60N55 D60N55-1 Package DPAK IPAK Packaging Tape & reel Tube
July 2006
Rev 1
1/12
www.st.com 12
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Contents
STD60N55 - STD60N55-1
Contents
1 2 3 4 5 6 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ................................................ 6
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
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STD60N55 - STD60N55-1
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID ID IDM (1) PTOT
Absolute maximum ratings
Parameter Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 55 20 65 46 260 110 0.73 8 390 -55 to 175 Unit V V A A A W W/C V/ns mJ C
dv/dt (2) EAS (3) Tj Tstg
Peak diode recovery voltage slope Single pulse avalanche energy Operating junction temperature Storage temperature
1. Pulse width limited by safe operating area 2. ISD <65A, di/dt <300A/s, VDD< V(BR)DSS. Tj < Tjmax 3. Starting Tj=25C, Id=32A, Vdd=40V
Table 2.
Symbol Rthj-case
Thermal resistance
Parameter Thermal resistance junction-case max Value 1.36 50 275 Unit C/W C/W C
Rthj-pcb (1) Thermal resistance junction-ambient max Tl Maximum lead temperature for soldering purpose
1. When mounted on FR-4 board of 1inch, 2oz Cu
3/12
Electrical characteristics
STD60N55 - STD60N55-1
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
Static
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = Max rating, VDS = Max rating,Tc = 125C VGS = 20V VDS= VGS, ID = 250A VGS= 10V, ID= 32A 2 8.0 Min. Typ. Max. Unit 55 10 100
200
V A A nA V m
4 10.5
Table 4.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =25V, ID=32A Min Typ. Max. Unit 50 2200 500 25 33.5 12.5 9.5 45 S pF pF pF nC nC nC
VDS = 25V, f = 1MHz, VGS=0
VDD = 27V, ID = 65A VGS =10V (see Figure 2)
1. Pulsed: pulse duration = 300s, duty cycle 1.5%
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STD60N55 - STD60N55-1
Electrical characteristics
Table 5.
Symbol td(on) tr td(off) tf
Switching on/off (inductive load)
Parameter Turn-on delay time Rise time Test conditions VDD = 27V, ID = 32A, RG = 4.7, VGS = 10V (see Figure 3) VDD = 27V, ID = 32A, RG = 4.7, VGS = 10V (see Figure 3) Min. Typ. 20 50 Max. Unit ns ns
Turn-off delay time Fall time
35 11.5
ns ns
Table 6.
Symbol ISD ISDM
(1)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 65A, VGS = 0 ISD = 65A, VDD = 30V di/dt = 100A/s, Tj = 150C(see Figure 5) 47 87 3.7 Test conditions Min. Typ. Max. 65 260 1.5 Unit A A V ns nC A
VSD trr Qrr IRRM
1. Pulsed: pulse duration = 300s, duty cycle 1.5%
5/12
Test circuit
STD60N55 - STD60N55-1
3
Figure 1.
Test circuit
Unclamped inductive load test circuit Figure 2. Unclamped inductive wafeform
Figure 3.
Switching times test circuit for resistive load
Figure 4.
Gate charge test circuit
Figure 5.
Test circuit for inductive load Figure 6. switching and diode recovery times
Switching time waveform
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STD60N55 - STD60N55-1
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STD60N55 - STD60N55-1
DPAK MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B b4 C C2 D D1 E E1 e e1 H L (L1) L2 L4 R V2 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 5.1 6.4 4.7 2.28 4.4 9.35 1 2.8 0.8 0.6 0.2 0 8 0 1 0.023 0.008 8 4.6 10.1 0.173 0.368 0.039 0.110 0.031 0.039 6.6 0.252 0.185 0.090 0.181 0.397 TYP MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.200 0.260 TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 inch
0068772-F
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STD60N55 - STD60N55-1
Package mechanical data
TO-251 (IPAK) MECHANICAL DATA
DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033
H C A C2 L2 D B3 B6 A1 L
= =
3
B5
B
A3
=
B2
=
G
=
E
L1
1
2
=
0068771-E
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Packaging mechanical data
STD60N55 - STD60N55-1
5
Packaging mechanical data
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W
BASE QTY 2500
mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40
15.7 16.3
inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574
0.618 0.641
MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1
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STD60N55 - STD60N55-1
Revision history
6
Revision history
Table 7.
Date 17-Jul-2005
Revision history
Revision 1 First release Changes
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STD60N55 - STD60N55-1
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